Investigation of the Atomic Interdi†usion and Phase Formation in Ion Beam-irradiated Thin and Multilayers by In situ RBS and Cu–Al Ag–Al XRD
نویسنده
چکیده
A. Markwitz,1,2,* W. Matz,1 M. Waldschmidt3 and G. Demortier2 1 Forschungszentrum Rossendorf, Institut fu r Ionenstrahlphysik und Materialforschung, Postfach 51 01 19, D-01314 Dresden, Germany 2 Laboratoire DÏAnalyses par Re actions Nucle aires, Faculte s Universitaires Notre-Dame de la Paix, 22, rue Muzet, B-5000 Namur, Belgium 3 Institut fu r Kernphysik, J. W. Goethe Universita t, August-Euler6, D-60486 Frankfurt, Germany Strae
منابع مشابه
Phase Formation in Ion Beam Bombarded Al–Au Multilayers using High-current 2.0 MeV 4He‘ Ions
High-current ion beam bombardment (IBB) was performed to interdi†use Al–Au multilayers produced by evaporation on Ñat substrates of carbon, silicon and gold (typical thickness of each layer 150 nm, packages consist of 2 and 2.5 periods). During IBB with 2 MeV 4He‘ ions, the Al–Au interdi†usion was measured simultaneously with Rutherford backscattering (RBS). A complete mixing of the multilayers...
متن کاملSurface and Layer State of Thin Au–Al Layers after High-energy Ion Irradiation Measured by RBS, Scanning Ion Microprobe and SEM
The surface and layer state of thin ion-beam-irradiated Au–Al layers was investigated with scanning high-energy ion microscopy (SHEIM), RBS and SEM. The thin metal layers (90 nm Au top layer and 200 nm A layer deposited on polished glassy carbon) were produced by evaporation and subsequently irradiated with 2.0 MeV 4He‘ ions (ion current 300 nA; beam spot diameter 0.5 mm) to initiated the Au–Al...
متن کاملX-ray re ̄ectivity investigation of near-surface density changes induced in Al±Au multilayers by high-current ion beam bombardment
Alternating Al±Au multilayers (typical thickness of each layer 150 nm) were deposited on polished glassy carbon substrates by evaporation under high-vacuum conditions at 278 K and subsequently interdiused with high-current 2.0 MeV 4He ions. After ion beam bombardment, non-destructive X-ray re ̄ectometry measurements reveal a signi®cant decrease of the density in the near-surface region from 19...
متن کاملPreparation and Characterization of Aluminum Nitride Thin Films with the Potential Application in Electro-Acoustic Devices
In this work, aluminum nitride (AlN) thin films with different thicknesses were deposited on quartz and silicon substrates using single ion beam sputtering technique. The physical and chemical properties of prepared films were investigated by different characterization technique. X-ray diffraction (XRD) spectra revealed that all of the deposited films have an amorphous str...
متن کاملGrowth, Characterization of Cu Nanoparticles Thin Film by Nd: YAG Laser Pulses Deposition
We report the growth and characterization of Cu nanoparticles thin film of on glass substrate by pulse laser deposition method. The Cu thin film prepared with different energy 50, 60, 70, and 80 mJ. The energy effect on the morphological, structural and optical properties were studied by AFM, XRD and UV-Visible spectrophotometer. Surface topography studied by atomic force microscopy revealed na...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 1998